دانلود مقاله بررسی تاثیر مدل ترانزیستور با فرکانس بالا در کاربرد کم نویز
دانلود رایگان مقاله انگلیسی:
High Frequency Transistor Models for Low Noise Applications
مشاهده توضیحات و خرید ترجمه آماده این مقاله :
نقش مدلهای ترانزیستور با فرکانس بالا در کاربردهای کم نویز
A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design
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8 Author(s)
Voinigescu, S.P. ; Nortel Technol., Northern Telecom Canada Ltd., Ottawa, Ont., Canada ; Maliepaard, M.C. ; Showell, J.L. ; Babcock, G.E.
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Fully scalable, analytical HF noise parameter equations for bipolar transistors are presented and experimentally tested on high-speed Si and SiGe technologies. A technique for extracting the complete set of transistor noise parameters from Y parameter measurements only is developed and verified. Finally, the noise equations are coupled with scalable variants of the HICUM and SPICE-Gummel-Poon models and are employed in the design of tuned low noise amplifiers (LNA's) in the 1.9-, 2.4-,and 5.8-GHz bands
Published in:
Solid-State Circuits, IEEE Journal of (Volume:32 , Issue: 9 )
Page(s):
1430 - 1439
ISSN :
0018-9200
INSPEC Accession Number:
5693566
DOI:
10.1109/4.628757
Date of Publication :
Sep 1997
Date of Current Version :
06 August 2002
Issue Date :
Sep 1997
Sponsored by :
IEEE Solid-State Circuits Society
Publisher:
IEEE